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| AF9926N N-Channel Enhancement Mode Power MOSFET Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 20 RDS(ON) (m) 30 ID (A) 6 Pin Assignments S1 G1 S2 G2 1 2 3 4 8 7 6 5 Pin Descriptions D1 D1 D2 D2 Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain SO-8 Ordering information AX Feature F :MOSFET PN 9926N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Sep 5, 2005 1/6 AF9926N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25C TA=70C TA=25C Rating 20 12 6 4.8 26 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 62.5 Units C/W Electrical Characteristics at TJ=25C unless otherwise specified Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=20V, VGS=0V VGS=12V VGS=-12V ID=6A, VDS=20V, VGS=5V VDS=10V, ID=1A, RG=6, VGS=5V RD=10 VGS=0V, VDS=20V, f=1.0MHz Min. 20 - Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 30 45 1.2 25 Units V V/oC m V S uA Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Forward Leakage Gate-Source Reverse Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 250 100 -100 35 7 11 60 140 80 130 nA nC ns pF Source-Drain Diode Symbol IS VSD Parameter Test Conditions Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V TJ=25C, IS=1.7A, Forward On Voltage (Note 3) VGS=0V 2 o Min. - Typ. 0.78 Max. 1.54 1.2 Unit V V Note 1: Surface mounted on 1 in copper pad of FR4 board, 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width 300us, duty cycle 2%. Anachip Corp. www.anachip.com.tw 2/6 Rev. 1.1 Sep 5, 2005 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation Anachip Corp. www.anachip.com.tw 3/6 Rev. 1.1 Sep 5, 2005 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Typical Gate Charge v.s. VGS Fig 10. Typical Capacitance v.s. VDS Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 4/6 Rev. 1.1 Sep 5, 2005 AF9926N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 5/6 Rev. 1.1 Sep 5, 2005 AF9926N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Logo Part Number 9926 N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8 D 8 7 6 5 E1 E 1 2 e 3 B 4 DETAIL A L A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw 6/6 Rev. 1.1 Sep 5, 2005 |
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